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Silicon

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Si

  • Purity: 99.9999 (6N)
  • Form: Granulate
  • Dimensions: <1 mm / 1–3 mm / 3–6 mm
  • Quantity: e.g. 500 g / 1 kg
  • Theoretical density at 20°C: 2.33 g/cm³
  • Melting Point: 1414°C
  • Evaporation Temperature (10⁻² mbar): approx. 1500 – 1700°C (dependent on process conditions)
  • Evaporation Temperature (10⁻¹ mbar): approx. 1650 – 1850°C (dependent on process conditions)
  • Boiling Point: 3265°C

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Description

  • Purity: 99.9999 (6N)
  • Form: Granulate
  • Dimensions: <1 mm / 1–3 mm / 3–6 mm
  • Quantity: e.g. 500 g / 1 kg
  • Theoretical density at 20°C: 2.33 g/cm³
  • Melting Point: 1414°C
  • Evaporation Temperature (10⁻² mbar): approx. 1500 – 1700°C (dependent on process conditions)
  • Evaporation Temperature (10⁻¹ mbar): approx. 1650 – 1850°C (dependent on process conditions)
  • Boiling Point: 3265°C

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